Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries areas such as semiconductors, spacecraft, aircraft, and rocket technologies due its high bandgap energy, useful melting point, good thermal conductivity, dielectric constants. In this context, our approach a novel method produce BeO thin films based on two-step spin-coating innovation of the conventional powder synthesis method. The surface morphology crystal structure were observed dependent citric acid/beryllium sulfate ratio sintering temperature, respectively. To characterize films, X-ray photoelectron spectroscopy was conducted elemental analysis. Furthermore, determined by reflection electron energy loss spectroscopy. Finally, leakage current planar metal–insulator–metal device consisting Au/Ti/BeO film/Ti/Au electrodes below nA range over linear voltage sweeping −20 V +20 V. These results can assist researchers control strategies, phase transfer theories, applications that utilize film manufactured solution process.